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2μm窄線寬激光器 EP2000-DM-B Series
EP2000-DM-B是一個(gè)性價(jià)比高， 窄線寬，高度相干的激光光源.類似于DFB形式的**技術(shù)， 即：ridge waveguide technology and epistructure design is used to deliver an InP-based strained quantum-well laser diode source emitting at a wavelength of 2.0μm with high SMSR. The Discrete Mode laser diode chip is packaged in an industry standard， hermetically sealed 14 pin butterfly package with integrated optical isolator， thermo-electric cooler (TEC)， monitor photodiode and thermistor.
Key Features | Applications |
Excellent reliability | High performance gas sensing |
Mode-Hop free tuning >2nm | Seed Laser |
Integrated optical isolator | |
Narrow linewidth <2MHz |
Optical and electrical characteristics: (T = 25°C)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT |
LASER DIODE | |||||
Output Power in Fibre | Pf | 1.5 | 1.75 | 2 | mW |
Centre Wavelength | λcen | 1950 | 2001 | 2150 | nm |
Threshold Current | Ith | - | 20 | 40 | mA |
Operating Current | Iop | - | 70 | 120 | mA |
Forward Voltage | Vf | - | 1.3 | 1.6 | V |
Side Mode Suppression Ratio | SMSR | 30 | 40 | - | dB |
Temperature Tuning Coefficient | - | 0.1 | - | nm/K | |
Current Tuning Coefficient | - | 0.01 | - | nm/mA | |
Quantum Efficiency | η | 0.02 | 0.03 | - | mW/mA |
Optical Isolation | ISO | 40 | - | dB | |
MONITOR DIODE* | |||||
Monitor Photo Current | Im | 0.2 | 0.4 | 0.8 | mA |
Monitor Operating Voltage | Vm | - | - | 5.5 | V |
Monitor Dark Current (at 5V VDR) | Imd | - | - | < 0.2 | μA |
Absolute Maximum Ratings (Tsub= 25°C)
Parameter | Symbol | Ratings | Units |
Laser diode reverse voltage | VR | 2 | V |
Laser diode forward current | IF | 120 | mA |
Photodiode reverse voltage | VDR | 20 | V |
Peltier current | IP | 1.2 | A |
Operating case temperature | Tcase | -20 to 65 | °C |
Storage temperature | Tstg | -40 to 85 | °C |
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